Rectifier utilize advanced processing techniques to achieve. This benefit,. The TO package is universally preferred for all. The low thermal resistance and. Absolute Maximum Ratings.
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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. Rectifier utilize advanced processing techniques to achieve. This benefit,. The TO package is universally preferred for all.
The low thermal resistance and. Absolute Maximum Ratings. T STG. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage. Operating Junction and. Storage Temperature Range. Soldering Temperature, for 10 seconds. Mounting torque, or M3 srew. Thermal Resistance. Case-to-Sink, Flat, Greased Surface. PD - A. No Preview Available! R DS on. V GS th. Drain-to-Source Breakdown Voltage. Breakdown Voltage Temp. Static Drain-to-Source On-Resistance. Gate Threshold Voltage.
Forward Transconductance. I GSS. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage. Total Gate Charge. Gate-to-Source Charge. Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. L D Internal Drain Inductance. L S Internal Source Inductance. C iss Input Capacitance. C oss Output Capacitance. C rss Reverse Transfer Capacitance. Between lead,. Source-Drain Ratings and Characteristics. I S Continuous Source Current. Body Diode. Q rr Reverse Recovery Charge.
IRFZ48V Datasheet PDF
IRFZ48V MOSFET. Datasheet pdf. Equivalent